MJW16212 ON Semiconductor, MJW16212 Datasheet - Page 3

• Manufacturer Part Number: MJW16212
• Description: Npn Transistor Bipolar Power Deflection Transistor For High And Very High Resolution Monitors
• Manufacturer: ON Semiconductor

FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 1 may be found at
any case temperature by using the appropriate curve on
Figure 3.
the power that can be handled to values less than the
limitations imposed by second breakdown.
REVERSE BIAS
sustained simultaneously during turn–off, in most cases,
with the base–to–emitter junction reverse biased. Under
these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This
can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc.
There are two limitations on the power handling ability of
The data of Figure 1 is based on T
At high case temperatures, thermal limitations will reduce
For inductive loads, high voltage and high current must be
C
Figure 1. Maximum Forward Bias
25_C. Second breakdown limitations do
Safe Operating Area
C
= 25_C; T
SAFE OPERATING AREA
C
J(pk)
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MJW16212
CE
is
3
Biased Safe Operating Area and represents the
voltage–current condition allowable during reverse biased
turnoff. This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
Figure 2 gives the RBSOA characteristics.
The safe level for these devices is specified as Reverse
Figure 2. Maximum Reverse Bias
Figure 3. Power Derating
Safe Operating Area