ZX3CD1S1M832 Zetex Semiconductors plc., ZX3CD1S1M832 Datasheet - Page 6

• Manufacturer Part Number: ZX3CD1S1M832
• Description: Zx3cd1s1m832 - 12v Pnp Low Saturation Transistor And 40v, 1a Schottky Diode Combination Dual
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
ZX3CD1S1M832
PARAMETER
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
V
V
I
C
t
CBO
EBO
CES
R
T
(on)
(off)
rr
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
(BR)R
F
D
amb
= 25°C unless otherwise stated).
MIN.
-7.5
300
300
180
100
-20
-12
40
60
45
6
-0.97
-0.87
TYP.
-100
-100
-195
-240
-8.5
475
450
275
100
130
240
265
305
355
390
425
495
420
-35
-25
-10
110
21
70
60
50
25
12
70
-0.950
MAX.
-1.05
-140
-150
-300
-300
270
290
340
400
450
500
600
100
-25
-25
-25
-17
30
—
UNIT
MHz
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
pF
ns
ns
ns
V
V
V
V
V
V
A
ISSUE 2 - OCTOBER 2007
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
I
I
I
I
I
I
I
I
I
V
f=1MHz,V
switched from
I
Measured at I
F
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
R
F
F
F
F
F
F
F
F
CB
EB
CES
CB
CC
R
=50mA*
=100mA*
=250mA*
=500mA*
=750mA*
=1000mA*
=1500mA*
=1000mA,T
=-100 A
=-10mA*
=-100 A
=-0.1A, I
=-1A, I
=-1.5A, I
=-3A, I
=-4A, I
=-4A, I
=-4A, V
=-10mA, V
=-0.1A, V
=-2.5A, V
=-8A, V
=-10A, V
=-50mA, V
=300 A
= 500mA to I
=30V
=I
=-6V
=-16V
=-10V, f=1MHz
=-6V, I
=-10V
B2
=-50mA
B
B
B
B
CE
CE
=-10mA*
=-50mA*
=-150mA*
=-150mA*
R
B
B
C
CE
=25V
CE
CE
=-2V*
=-2V*
=-2A
=-10mA*
=-50mA*
CE
CE
a
=-2V*
R
=-2V*
=-2V*
=100°C*
R
= 50mA
=-2V*
=-10V
= 500mA