ZX3CD1S1M832 Zetex Semiconductors plc., ZX3CD1S1M832 Datasheet - Page 4

• Manufacturer Part Number: ZX3CD1S1M832
• Description: Zx3cd1s1m832 - 12v Pnp Low Saturation Transistor And 40v, 1a Schottky Diode Combination Dual
• Manufacturer: Zetex Semiconductors plc.

THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.
ZX3CD1S1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
PARAMETER
Schottky Diode
Continuous Reverse Voltage
Forward Voltage @ I
Forward Current
Average Peak Forward Current D=50%
Non Repetitive Forward Current t≤ 100 s
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Storage Temperature Range
Junction Temperature
F
=1000mA(typ)
t≤ 10ms
4
SYMBOL
V
V
I
I
I
P
P
P
P
P
P
T
T
F
FAV
FSM
D
D
D
D
D
D
stg
j
SYMBOL
R
R
R
R
R
R
R
F
θJA
θJA
θJA
θJA
θJA
θJA
-55 to +150
VALUE
VALUE
1850
1.36
13.6
425
125
1.2
0.8
0.9
2.4
73.5
41.7
40
12
12
20
24
125
111
3
7
2
8
9
83
51
ISSUE 2 - OCTOBER 2007
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
mA
mV
W
W
W
W
W
W
°C
°C
A
A
A
V