2DB1697 Diodes, Inc., 2DB1697 Datasheet - Page 2

• Manufacturer Part Number: 2DB1697
• Description: Low Vce Sat Pnp Surface Mount Transistor
• Manufacturer: Diodes, Inc.

2DB1697
Document number: DS31618 Rev. 2 - 2
10,000
1,000
1.2
1.0
0.8
0.6
0.4
0.2
2.0
1.6
1.2
0.8
0.4
100
0
0
1
0
Fig. 3 Typical DC Current Gain vs. Collector Current
1
T = 85°C
Fig. 1 Power Dissipation vs. Ambient Temperature
T = -55°C
T = 25°C
T = 150°C
T = -55°C
T = 85°C
T = 25°C
A
A
A
A
A
Fig. 5 Typical Base-Emitter Turn-On Voltage
A
A
V
T = 150°C
CE
A
-I , COLLECTOR CURRENT (mA)
25
T , AMBIENT TEMPERATURE ( C)
-I , COLLECTOR CURRENT (mA)
C
= -4V
A
C
10
10
vs. Collector Current
50
Note 3
100
100
75
100
Note 4
1,000
1,000
°
125
V
CE
= -4V
10,000
10,000
150
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0.001
1.2
0.8
0.6
0.4
0.2
1.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
1
1
T = 85°C
T = 25°C
T = 150°C
0
T = -55°C
1
Fig. 4 Typical Collector-Emitter Saturation Voltage
I
A
A
A
C B
A
Fig. 6 Typical Base-Emitter Saturation Voltage
/I
-V , COLLECTOR-EMITTER VOLTAGE (V)
= 20
CE
-I , COLLECTOR CURRENT (mA)
I /I = 20
C B
C
-I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical Collector Current
10
vs. Collector-Emitter Voltage
1
10
vs. Collector Current
vs. Collector Current
100
100
2
T = 85°C
A
T = 150°C
A
1,000
I = -2mA
I = -1mA
T = -55°C
I = -3mA
B
I = -5mA
B
I = -4mA
B
B
B
A
1,000
3
T = 25°C
A
© Diodes Incorporated
2DB1697
December 2008
10,000
10,000
4