Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Features
•
•
•
•
•
•
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation (Note 3) @ T
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
Power Dissipation (Note 4) @ T
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
Operating and Storage Temperature Range
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
2DB1697
Document number: DS31618 Rev. 2 - 2
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DD2661)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
1.
2.
3.
4.
5.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Characteristic
Characteristic
Characteristic
@T
A
A
= 25°C
= 25°C
A
= 25°C unless otherwise specified
Top View
@T
A
= 25°C unless otherwise specified
2
copper pad layout.
A
A
= 25°C
= 25°C
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
I
C
Device Schematic
h
www.diodes.com
CBO
EBO
f
obo
FE
T
1
1 of 4
2,4
3
Min
270
-15
-12
Mechanical Data
•
•
•
•
•
•
•
-6
⎯
⎯
⎯
⎯
⎯
LOW V
Symbol
Symbol
T
Please click here to visit our online spice models database.
J
V
V
V
R
R
, T
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
I
P
P
CBO
CEO
EBO
CM
I
θ JA
θ JA
C
D
D
STG
Typ
140
-65
40
⎯
⎯
⎯
⎯
⎯
⎯
CE(SAT)
Pin Out Configuration
PNP SURFACE MOUNT TRANSISTOR
-180
Max
-0.1
-0.1
680
⎯
⎯
⎯
⎯
⎯
-55 to +150
Value
Value
62.5
139
-15
-12
0.9
-6
-4
-2
2
Unit
MHz
mV
μA
μA
pF
⎯
V
V
V
I
I
I
V
V
I
V
V
f = 1MHz
V
f = 100MHz
C
C
E
C
CB
EB
CE
CB
CE
= -10μA, I
= -10μA, I
= -1mA, I
= -1A, I
= -6V, I
= -15V, I
= -2V, I
= -10V, I
= -2V, I
Conditions
B
B
C
= -50mA
C
C
© Diodes Incorporated
2DB1697
C
E
December 2008
E
E
°C/W
°C/W
= 0
= 0
= -200mA
= -100mA,
Unit
Unit
= 0
= 0
°C
= 0
= 0,
W
W
V
V
V
A
A
