DIM400BSS17-A000 Dynex Semiconductor, DIM400BSS17-A000 Datasheet - Page 5

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DIM400BSS17-A000

Manufacturer Part Number
DIM400BSS17-A000
Description
Igbt Modules - 1700v
Manufacturer
Dynex Semiconductor
Datasheet
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
200
175
150
125
100
900
800
700
600
500
400
300
200
100
Fig.5 Typical switching energy vs collector current
75
50
25
0
0
0
SEMICONDUCTOR
0
Fig.3 Typical output characteristics @ 25° C
Common emitter.
T
V
and not the auxiliary terminals
Conditions:
V
T
R
case
ce
c
ce
g
= 125° C
= 4.7 Ohms
is measured at power busbars
= 900V
0.5
= 25°C
100
1
Collector-emitter voltage, V
1.5
Collector current, I
200
2
2.5
300
3
C
- (A)
ce
V
3.5
- (V)
GE
= 20V
400
15V
12V
10V
4
E
E
E
4.5
off
on
rec
500
5
400
300
200
100
400
300
200
100
900
800
700
600
500
Fig.6 Typical switching energy vs gate resistance
0
0
0
0
Fig.4 Typical output characteristics @ 125° C
Conditions:
V
I
T
Common emitter.
T
V
and not the auxiliary terminals
C
c
ce
case
ce
= 400A
0.5
= 125°C
= 900V
is measured at power busbars
= 125°C
1 1.5
Collector-emitter voltage, V
4
Gate Resistance, R
2 2.5
8
3 3.5
g
- (Ohms)
DIM400BSS17-A000
4 4.5
ce
V
GE
- (V)
12
= 20V
15V
12V
10V
5 5.5
5
/
E
E
E
8
off
on
rec
16
6

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