DIM400BSS17-A000 Dynex Semiconductor, DIM400BSS17-A000 Datasheet - Page 2

• Manufacturer Part Number: DIM400BSS17-A000
• Description: Igbt Modules - 1700v
• Manufacturer: Dynex Semiconductor

ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Symbol
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Creepage distance:
CTI (Critical Tracking Index):
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
V
V
I
P
V
C(PK)
I
GES
I
CES
max
2
isol
C
t
R
R
R
T
th(c-h)
th(j-c)
th(j-c)
SEMICONDUCTOR
T
-
stg
j
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power
dissipation
Diode I
Isolation voltage – per module
2
Thermal resistance – transistor
Thermal resistance - diode
Thermal resistance – case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
t value (IGBT arm)
Parameter
Parameter
Al
20mm
175
2
O
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
3
case
case
GE
R
= 0, t
= 0V
= 65° C
= 25° C, T
case
P
= 10ms, T
=110° C
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting – M6
Electrical connections – M6
Electrical connection – M4
j
Baseplate material:
Clearance:
= 150° C
Test Conditions
vj
Test Conditions
= 125° C
-
Min.
-40
2.5
1.1
3
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
Copper
11mm
DIM400BSS17-A000
Max.
100
150
125
125
45
15
Max.
1700
2780
4000
5
5
2
400
800
±20
30
° C/kW
° C/kW
° C/kW
2
Units
Units
Nm
Nm
Nm
/
kA
° C
° C
° C
8
W
V
V
A
A
V
2
S