DIM400PBM17-A000 Dynex Semiconductor, DIM400PBM17-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM400PBM17-A000
• Description: Igbt Bi-directional Switch Module
• Manufacturer: Dynex Semiconductor

DIM400PBM17-A000
TYPICAL CHARACTERISTICS
6/10
200
175
150
125
100
900
800
700
600
500
400
300
200
100
75
50
25
Fig. 5 Typical switching energy vs collector current
0
0
0
0
Conditions:
V
T
R
Common emitter.
T
V
and not the auxiliary terminals
c
ce
g
case
ce
= 125°C
= 4.7Ω
= 900V
is measured at power busbars
0.5
Fig. 3 Typical output characteristics
= 25˚C
100
1
Collector-emitter voltage, V
Collector current, I
1.5
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
200
2
2.5
300
C
3
- (A)
ce
V
3.5
GE
- (V)
400
= 20V
15V
12V
10V
4
E
E
E
4.5
off
on
rec
500
5
400
300
200
100
400
300
200
100
900
800
700
600
500
Fig. 6 Typical switching energy vs gate resistance
0
0
0
0
Conditions:
V
I
T
Common emitter.
T
V
and not the auxiliary terminals
C
ce
c
case
ce
= 400A
0.5
= 125°C
Fig. 4 Typical output characteristics
= 900V
is measured at power busbars
= 125˚C
1 1.5
Collector-emitter voltage, V
4
Gate Resistance, R
2 2.5
8
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3 3.5
g
- (Ohms)
4 4.5
ce
V
GE
12
- (V)
= 20V
15V
12V
10V
5 5.5
E
E
E
off
on
rec
16
6