DIM400PBM17-A000 Dynex Semiconductor, DIM400PBM17-A000 Datasheet
DIM400PBM17-A000
Related parts for DIM400PBM17-A000
DIM400PBM17-A000 Summary of contents
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... The DIM400PBM17-A000 is a bi-directional 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) switch. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand. This module is optimised for applications requiring high thermal cycling capability ...
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... DIM400PBM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature j T Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400PBM17-A000 Min. Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode – ...
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... DIM400PBM17-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol Collector cut-off current I CES Gate leakage current I GES Gate threshold voltage V GE(TH) V Collector-emitter saturation voltage CE(sat) V On-state voltage T (measured across terminals 2 and 3) I Diode forward current F I Diode maximum forward current ...
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... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM400PBM17-A000 Test Conditions Min 400A - 15V - 900V - CE ...
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... DIM400PBM17-A000 TYPICAL CHARACTERISTICS 900 Common emitter 25˚C case 800 V is measured at power busbars ce and not the auxiliary terminals 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 Collector-emitter voltage, V Fig. 3 Typical output characteristics 200 Conditions 900V 125°C 175 ...
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... V = 15V g(off) 2.5 3.0 3 (V) 0 200 F Fig. 8 Reverse bias safe operating area 100 10 1 2000 1600 0.1 - (V) R 0.001 DIM400PBM17-A000 Chip Module = 125˚C, = 4.7ohms 400 600 800 1000 1200 1400 1600 1800 Collector emitter voltage (V) ce Diode Transistor IGBT R (˚C/KW) 1.12 8.01 11.28 i (ms) ...
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... DIM400PBM17-A000 700 600 500 400 300 200 100 Case temperature, T case Fig current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 300 250 200 150 100 50 0 100 120 140 ...
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... PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Nominal weight: 750g Module outline type code: P DIM400PBM17-A000 9/10 ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...