FMA65N15T2 Fuji Electric holdings CO.,Ltd, FMA65N15T2 Datasheet
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FMA65N15T2
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FMA65N15T2 Summary of contents
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... SPECIFICATION Device Name Type Name Spec. No. Date NAME DATE APPROVED DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 Power MOSFET : FMA65N15T2 : MS5F6120 : Jun.-17-2005 : Fuji Electric Device Technology Co.,Ltd. MS5F6120 H04-004-05 ...
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Revised Records Date Classification Index Jun.-17 enactment 2005 Feb.-22 revise a 2006 Fuji Electric Device Technology Co.,Ltd. Content Drawn Checked Checked Approved Revised characteristics curve. A dded avalanche current. MS5F6120 a 2 ...
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... This specifies Fuji Power MOSFET FMA65N15T2 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F 5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive ...
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Dynamic Ratings Description Symbol Forward Transconductance g fs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Turn-On Time tr td(off) Turn-Off Time tf Q Total Gate Charge G Q Gate-Source Charge GS Gate-Drain Charge Q GD Reverse ...
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Fig.1 Test circuit Fig.2 Operating waveforms -15V 0 Fuji Electric Device Technology Co.,Ltd. L 50Ω D.U.T L=1.3mH Vcc=48V Single Pulse Test +10V IDP MS5F6120 Vcc DSS H04-004-03 ...
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All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (85±2°C,65±5%RH,168±24hr) Heat treatment of soldering (Solder ...
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Test Test Testing methods and Conditions No. Items 1 High Temp. Temperature : 150+0/-5°C Storage Test duration : 1000hr 2 Low Temp. Temperature : -55+5/-0°C Storage Test duration : 1000hr 3 Temperature Temperature : 85±2°C Humidity Relative humidity : 85±5% ...
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Fuji Electric Device Technology Co.,Ltd. MS5F6120 H04-004-03 a ...
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Cautions ・ Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to ...
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Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M ) ・ When soldering, in order to protect the MOSFETs from static electricity, ground the ...
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Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may ...
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Typical Output Characteristics ID=f(VDS):80 120 20V 100 Fuji Electric Device Technology Co.,Ltd. Allowable Power Dissipation PD=f(Tc 100 s pulse ...
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Typical Transfer Characteristic ID=f(VGS):80 100 10 1 0.1 0 Typical Transconductance gfs=f(ID):80 100 10 1 0.1 0.1 Fuji Electric Device Technology Co.,Ltd. s pulse test,VDS=25V,Tch= VGS[V] s pulse test,VDS=25V,Tch= [A] MS5F6120 ...
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Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 0.06 VGS=4V 0.05 0.04 0.03 0.02 0.01 0. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=32.5A,VGS=10V 0.08 0.06 0.04 0.02 0.00 -50 -25 Fuji Electric Device Technology Co.,Ltd. s pulse test,Tch=25 4. ...
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Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Typical Gate Charge Characteristics VGS=f(Qg):ID=65A,Tch= Fuji Electric Device Technology Co.,Ltd. ...
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Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 100 10 1 0.1 0.0 Fuji Electric Device Technology Co.,Ltd. Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V] ...
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Typical Switching Characteristics vs. ID t=f(ID):Vcc=90V,VGS=10V,RG= Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=48V Fuji Electric Device Technology Co.,Ltd. td(off) tf td(on) ...
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Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=65A 1000 800 I =26A AS 600 I =39A AS 400 I =65A AS 200 Maximum Avalanche Current Pulsewidth I =f Single Pulse ...
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Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Fuji Electric Device Technology Co.,Ltd [sec] MS5F6120 - ...