VEC2611 Sanyo Semiconductor Corporation, VEC2611 Datasheet
VEC2611
Related parts for VEC2611
VEC2611 Summary of contents
Page 1
... Ordering number : ENA0425 VEC2611 Features The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, • thereby enabling high-density mounting. 1.8V drive. • Mounting height 0.75mm. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...
Page 2
... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 VEC2611 Symbol Conditions R DS (on =1.5A = (on =1A =2. (on =0.5A =1.8V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit. ...
Page 3
... IT03491 [Nch] 250 Ta=25 ° C 200 150 100 IT11098 -- --1. =4.6Ω OUT G VEC2611 50Ω --0.1 --0.2 --0.3 Drain-to-Source Voltage --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Gate-to-Source Voltage (on --1. --0. --1 --2 --3 --4 ...
Page 4
... Diode Forward Voltage Time -- 100 (on 1 0.1 1.0 Drain Current VEC2611 [Nch] 300 250 200 150 100 50 0 100 120 140 160 --60 --40 IT11100 [Nch 1 --0 ...
Page 5
... Mounted on a ceramic board (900mm 0. 0.01 0.1 1.0 Drain-to-Source Voltage 1.2 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature °C VEC2611 [Nch] 1000 f=1MHz 100 IT03497 [Nch] --4 --2.6 A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 ...
Page 6
... Note on usage : Since the VEC2611 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...