VEC2820 Sanyo Semiconductor Corporation, VEC2820 Datasheet
VEC2820
Related parts for VEC2820
VEC2820 Summary of contents
Page 1
... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2820 SANYO Semiconductors MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VEC2820 Symbol Conditions V RRM V RSM FSM 50Hz sine wave, 1 cycle Tj Tstg Symbol ...
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... =1. =6.67Ω D PW=10µs D.C.≤1% G VEC2820 P.G 50Ω 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage VEC2820 Electrical Connection Test Circuit [SBD] Duty≤10% 50Ω V OUT 10µs [MOSFET =1.0V 0 0.7 0.8 0.9 1.0 0 IT10933 Anode Contact ...
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... Drain Current 4 =10V I D =3A 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge VEC2820 [MOSFET] 150 Ta=25°C 100 --100 IT10935 [MOSFET 0.001 2 3 ...
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... Average Output Current FSM -- t 12 Current waveform 50Hz sine wave 0. 0 Time VEC2820 [MOSFET] 120 140 160 IT12457 [SBD] 100000 10000 1000 100 10 1.0 0.1 0.01 0.4 0.5 0 IT07150 [SBD] 2 (2) (4)(3) 100 7 5 Rectangular wave 3 θ ...
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... Note on usage : Since the VEC2820 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...