VEC2818 Sanyo Semiconductor Corporation, VEC2818 Datasheet
VEC2818
Related parts for VEC2818
VEC2818 Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2818 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Anode Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 VEC2818 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--20V =0V I GSS V GS =±8V = (off =--10V -1mA yfs =--10V - (on =--2A =--4 ...
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... Drain-to-Source Voltage (on 160 140 120 100 --1 --2 --3 --4 --5 Gate-to-Source Voltage VEC2818 t rr Test Circuit [SBD] Duty≤10% V OUT 10µs VEC2818 [MOSFET] --0.6 --0.7 --0.8 --0.9 --1.0 IT11952 [MOSFET] 160 Ta=25 ° C 140 120 100 --6 --7 --8 --9 --10 IT11856 50Ω 100Ω 10Ω --5V ...
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... Drain Current --4 --10V --3.5A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C VEC2818 [MOSFET] -- --10V --1 --0 --0. --0.001 --0.2 --0.3 --10 IT06420 [MOSFET --10V --4 ...
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... Average Output Current FSM -- t 7 Current waveform : 50Hz sine wave 0. 0.1 Time VEC2818 [SBD] 100 ...
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... Note on usage : Since the VEC2818 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...