VEC2610 Sanyo Semiconductor Corporation, VEC2610 Datasheet - Page 5
VEC2610
Manufacturer Part Number
VEC2610
Description
N-channel And P-channel Silicon Mosfets
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.VEC2610.pdf
(6 pages)
1000
0.01
100
1.0
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
1.2
1.0
0.9
0.8
0.6
0.4
0.2
0.01
2
7
5
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
7
5
3
2
3
0
0
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS =10V
I D =4.5A
2 3
Operation in this
area is limited by R DS (on).
20
1
Mounted on a ceramic board (900mm
Drain-to-Source Voltage, V DS -- V
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
5 7
Ambient Temperature, Ta -- C
40
5
2
Total Gate Charge, Qg -- nC
0.1
60
V GS -- Qg
3
2
P D -- Ta
3
A S O
10
5 7
80
4
1.0
100
5
2
2
0.8mm) 1unit
3
120
15
6
5 7
[Nch / Pch]
2
f=1MHz
140
10
0.8mm)
7
IT08607
IT08609
IT10215
IT10217
[Nch]
[Nch]
[Nch]
10 s
2
160
20
8
3
VEC2610
--0.01
1000
--1.0
--0.1
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
--10
--0.01
2
7
5
3
2
7
5
3
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
V DS = --10V
I D = --3A
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
--2
--4
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
2
Drain-to-Source Voltage, V DS -- V
5 7
Operation in this
area is limited by R DS (on).
Total Gate Charge, Qg -- nC
--0.1
--6
V GS -- Qg
2
--8
4
3
A S O
--10
5 7
--1.0
--12
6
2
2
--14
0.8mm) 1unit
3
--16
5 7
8
No. A0104-5/6
f=1MHz
--10
--18
IT06423
IT06424
IT10216
10 s
[Pch]
[Pch]
[Pch]
2
--20
10
3