VEC2803 Sanyo Semiconductor Corporation, VEC2803 Datasheet
VEC2803
Related parts for VEC2803
VEC2803 Summary of contents
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... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2803 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications ...
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... Anode Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 VEC2803 Symbol Conditions V (BR)DSS I D =--1mA DSS V DS =--30V GSS 16V (off =--10V -1mA yfs V DS =--10V -1. (on =--1 ...
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... Drain-to-Source Voltage (on 220 200 180 160 --1.5A 140 120 100 --2 --4 --6 Gate-to-Source Voltage VEC2803 t rr Test Circuit [SBD] Duty 10% V OUT 10 s VEC2803 [MOSFET] --0.6 --0.7 --0.8 --0.9 --1.0 IT07767 [MOSFET] 220 Ta=25 C 200 180 160 140 120 100 --8 --10 --12 IT07769 50 100 10 ...
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... --3A --9 --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature VEC2803 [MOSFET] -- 10V --1 --0 --0. --0.001 --0 IT07771 [MOSFET] 1000 ...
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... Average Forward Current 100 0.1 1.0 10 Reverse Voltage VEC2803 [SBD 10000 1000 100 1.0 0.4 0.5 0 IT07944 [SBD] 140 (2) (4) (3) (2) (4) (3) ...
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... Note on usage : Since the VEC2803 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...