VEC2302 Sanyo Semiconductor Corporation, VEC2302 Datasheet

VEC2302

Manufacturer Part Number

VEC2302

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.VEC2302.pdf (4 pages)

Current page: 1 of 4
Download datasheet (38Kb)

Ordering number : ENN8026

VEC2302

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : BB

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

The best suited for inverter applications.

Low ON-resistance.

Composite type facilitating high-density mounting.

4V drive.

Mounting high 0.75mm.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

P T

yfs

I D

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -30V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -1.5A

I D =--1.5A, V GS =- -10V

I D =--0.7A, V GS =- -4V

V DS =- -10V, f=1MHz

VEC2302

Conditions

0.8mm)1unit

0.8mm)

21005PE TS IM TB-00000505

min

--1.0

--30

2.0

Ratings

typ

Ratings

510

117

115

3.4

--55 to +150

Continued on next page.

max

150

--2.4

--30

--12

0.9

1.0

168

--3

--1

No.8026-1/4

Unit

Related parts for VEC2302

VEC2302 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2302 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... See specified Test Circuit t f See specified Test Circuit =--10V -10V =--3A Qgs V DS =--10V -10V =--3A Qgd V DS =--10V -10V =-- =--3A --1. =10 V OUT VEC2302 Ratings min typ max 2.4 1.7 --0.87 Electrical Connection ...

Page 3

... Drain Current Time -- --15V --10V 100 (on 1 --0.1 --1.0 Drain Current VEC2302 -- --10V --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 IT07767 200 Ta=25 C 180 160 140 120 100 --10 --12 --50 IT07769 ...

Page 4

... Ambient Temperature Note on usage : Since the VEC2302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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