PBSS302ND NXP Semiconductors, PBSS302ND Datasheet - Page 8

• Manufacturer Part Number: PBSS302ND
• Description: Pbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PBSS302ND_2
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
(V)
( )
10
10
10
10
10
10
10
10
1
1
2
3
1
10
3
2
1
2
10
I
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
3
3
(1)
(2)
(3)
10
10
006aaa276
006aaa281
I
I
4
4
C
C
(mA)
(mA)
Rev. 02 — 18 February 2008
10
10
5
5
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
1
1
1
2
3
10
3
2
1
2
10
T
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
40 V, 4 A NPN low V
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
(1)
(2)
(3)
1
1
10
10
(1)
(2)
(3)
10
10
2
2
PBSS302ND
CEsat
10
10
3
3
© NXP B.V. 2008. All rights reserved.
(BISS) transistor
10
10
006aaa277
006aaa326
I
4
4
C
I
C
(mA)
(A)
10
10
5
5
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