HSG2004 Renesas Electronics Corporation., HSG2004 Datasheet - Page 2

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HSG2004

Manufacturer Part Number
HSG2004
Description
Sige Hbt High Frequency Medium Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
HSG2004
Electrical Characteristics
DC current transfer ratio
Reverse Transfer Capacitance
Transition Frequency
Maximum Stable Gain
Maximum Available Gain
Maximum Available Gain
Power Gain
1dB Compression Point at output
Saturation Output Power
Main Characteristics
Rev.4.00 Jun 21, 2006 page 2 of 12
Item
Symbol
Po(sat)
P1dB
MSG
MAG
MAG
h
PG
C
f
FE
T
re
1500
1000
500
0
Collector Power Dissipation Curve
Ambient Temperature
Min
170
14
50
+14.5
30.0
15.5
11.5
Typ
240
+22
*(4 x 4 x 1mm) on PCB
21
12
100
Max
320
0.6
150
T
a
(°C)
200
GHz
dBm
dBm
Unit
dB
dB
dB
dB
pF
V
V
emitter grounded
V
f = 1 GHz
V
f = 5.8 GHz
V
f = 2.4 GHz
V
f = 5.8 GHz
V
f = 5.8 GHz, Pin = +0 dBm
V
f = 5.8 GHz
V
f = 5.8 GHz, Pin = +0 dBm
CE
CB
CE
CE
CE
CE
CE
CE
CE
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3.6 V, I
= 3.6 V, I
= 3.6 V, I
Test Conditions
C
E
C
C
C
C
= 30 mA
= 0, f = 1 MHz,
= 30 mA,
= 30 mA,
= 30 mA,
= 30 mA,
idle
idle
idle
= 30 mA,
= 30 mA,
= 30 mA,
(Ta = 25°C)

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