HSG2004 Renesas Electronics Corporation., HSG2004 Datasheet

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HSG2004

Manufacturer Part Number
HSG2004
Description
Sige Hbt High Frequency Medium Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
HSG2004
SiGe HBT
High Frequency Medium Power Amplifier
Features
Outline
Note:
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: Value on PCB (40 x 40 x 1.0 mm)
Rev.4.00 Jun 21, 2006 page 1 of 12
High Transition Frequency
f
Low Distortion and Excellent Linearity
P1dB at output = +14.5 dBm typ. f = 5.8 GHz
High Collector to Emitter Voltage
V
Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone.
T
CEO
= 30 GHz typ.
Marking is “2004”.
= 5 V
Item
Renesas Package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV>)
8
7 6
1
5
2
9
3
4
Symbol
V
V
V
Tstg
Pc
CBO
CEO
Tj
EBO
I
C
3
2
1
4
9
8
5
6
7
–55 to +150
Ratings
200
150
1.2
12
5
1
Note
1. Collector
2. Collector
3. Collector
4. Emitter
5. Emitter
6. Base
7. Emitter
8. Emitter
9. Emitter
REJ03G0484-0400
Unit
mA
Jun 21, 2006
°C
W
V
V
V
C
(Ta = 25°C)
Rev.4.00

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HSG2004 Summary of contents

Page 1

... HSG2004 SiGe HBT High Frequency Medium Power Amplifier Features High Transition Frequency GHz typ. T Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ 5.8 GHz High Collector to Emitter Voltage CEO Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. ...

Page 2

... HSG2004 Electrical Characteristics Item DC current transfer ratio Reverse Transfer Capacitance Transition Frequency Maximum Stable Gain Maximum Available Gain Maximum Available Gain Power Gain 1dB Compression Point at output Saturation Output Power Main Characteristics Rev.4.00 Jun 21, 2006 page Symbol Min Typ Max ...

Page 3

... HSG2004 Typical Transfer Characteristics 100 0.2 0.4 Base to Emitter Voltage Reverse Transfer Capacitanse vs. Collector to Base Voltage 0.5 0.4 0.3 0.2 0 Collector to Base Voltage Maximum Stable Gain, Maximum Available Gain vs. Collector Current MAG 25 MSG Collector Current Rev.4.00 Jun 21, 2006 page ...

Page 4

... HSG2004 2.4 GHz Characteristics Evaluation Board Circuit VBB:Bias Control Characteristics in out Characteristics in out 3 idle f = 2.4 GHz -20 -10 Input Power P in (dBm) S parameter vs. Frequency 20 S21 10 S11 0 -10 S22 -20 -30 S12 -40 1.0 1.5 2.0 2.5 Frequency f (GHz) Rev.4.00 Jun 21, 2006 page µ ...

Page 5

... HSG2004 5.8 GHz Characteristics Evaluation Board Circuit VBB:Bias Control *1 µ Characteristics in out Characteristics in out 3 idle 5.8 GHz P out -20 -10 0 Input Power P in (dBm) S parameter vs. Frequency 3 S21 0 S11 -10 S22 -20 S12 - Frequency f (GHz) Rev ...

Page 6

... HSG2004 S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° ...

Page 7

... HSG2004 S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 3 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° ...

Page 8

... HSG2004 S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 3 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° ...

Page 9

... HSG2004 S parameter S11 f (MHz) MAG ANG (deg.) 100 0.684 -61.3 200 0.708 -53.6 300 0.664 -81.8 400 0.644 -105.0 500 0.638 -121.4 600 0.640 -134.8 700 0.640 -143.6 800 0.640 -150.6 900 0.641 -156.5 1000 0.641 -161.6 1100 0.644 -166.1 1200 0.648 -169.8 1300 ...

Page 10

... HSG2004 S parameter S11 f (MHz) MAG ANG (deg.) 100 0.674 -60.3 200 0.708 -53.6 300 0.668 -81.6 400 0.646 -104.3 500 0.637 -121.1 600 0.638 -134.3 700 0.640 -143.1 800 0.639 -150.2 900 0.639 -156.1 1000 0.639 -161.2 1100 0.643 -165.7 1200 0.647 -169.5 1300 ...

Page 11

... HSG2004 S parameter S11 f (MHz) MAG ANG (deg.) 100 0.686 -60.1 200 0.713 -53.6 300 0.669 -81.1 400 0.645 -103.8 500 0.637 -120.5 600 0.638 -133.6 700 0.638 -142.5 800 0.637 -149.7 900 0.638 -155.6 1000 0.638 -160.8 1100 0.642 -165.3 1200 0.645 -169.1 1300 ...

Page 12

... S S Ordering Information Part Name HSG2004TB-E Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.4.00 Jun 21, 2006 page Previous Code MASS[Typ ...

Page 13

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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