NESG210833 Renesas Electronics Corporation., NESG210833 Datasheet - Page 6

• Manufacturer Part Number: NESG210833
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

S-PARAMETERS
6
of the parameters to microwave circuit simulators without the need for keyboard inputs.
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
–10
30
20
10
–20
1
4
3
2
0
0
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
f = 1 GHz,
Z
Z
S
L
V
I
f = 1 GHz
CE
C (set)
= 50 Ω
CE
= Z
–15
= 5 V,
= 5 V,
Sopt
= 40 mA ,
G
,
Collector Current I
L
–10
Input Power P
–5
10
I
C
NF
0
in
P
(dBm)
out
C
(mA)
G
5
a
10
Data Sheet PU10765EJ02V0DS
100
15
16
14
12
10
8
6
4
2
0
400
300
200
100
0
–10
–20
–30
–40
–50
–60
–70
–80
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
30
20
10
40
30
20
10
–20
0
0
1
V
f1 = 1.000 GHz,
f2 = 1.001 GHz
CE
P
EACH OUTPUT POWER, IM
vs. EACH INPUT POWER
out
= 5 V,
Each Input Power P
–10
IM
Collector Current I
3
0
10
10
in (each)
C
V
I
f1 = 1.000 GHz,
f2 = 1.001 GHz
NESG210833
C (set)
(mA)
CE
(dBm)
= 5 V,
= 40 mA ,
20
3
100
30