NESG210833 Renesas Electronics Corporation., NESG210833 Datasheet - Page 4

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NESG210833

Manufacturer Part Number
NESG210833
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG210833-T1B-A
Manufacturer:
MIT
Quantity:
66
4
Remark The graphs indicate nominal characteristics.
1 000
100
10
35
30
25
20
15
10
20
15
10
1
5
0
5
0
0.1
0.1
1
V
f = 1 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 3 V,
DC CURRENT GAIN vs.
COLLECTOR CURRENT
|S
Collector Current I
Collector Current I
21e
|
2
Frequency f (GHz)
1
MSG
10
1
MAG
C
C
10
MAG
(mA)
(mA)
V
I
C
V
CE
MSG
= 5 mA
CE
Data Sheet PU10765EJ02V0DS
= 3 V,
= 3 V
100
100
10
1 000
100
20
15
10
35
30
25
20
15
10
10
0.1
1
5
0
5
0
0.1
1
V
f = 1 GHz
CE
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 5 V,
DC CURRENT GAIN vs.
COLLECTOR CURRENT
|S
Collector Current I
Collector Current I
21e
|
2
Frequency f (GHz)
1
MSG
10
1
MAG
MAG
NESG210833
C
C
10
(mA)
(mA)
V
I
C
V
CE
MSG
= 30 mA
CE
= 3 V,
= 5 V
100
100
10

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