BFG10W NXP Semiconductors, BFG10W Datasheet - Page 3

• Manufacturer Part Number: BFG10W
• Description: Bfg10w/x Uhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
1995 Sep 22
handbook, full pagewidth
V
V
V
I
h
C
C
SYMBOL
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
= 25 C (unless otherwise specified).
c
re
UHF power transistor
Z th j-a
(K/W)
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
10
10
10
3
2
1
10
6
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
0.75
0.33
0.05
0.02
0.01
0.5
0.2
0.1
= 1
PARAMETER
10
5
10
4
open emitter; I
open base; I
open collector; I
V
I
I
I
C
E
C
CE
= i
= 50 mA; V
= 0; V
= 6 V; V
e
= 0; V
10
3
CE
3
CONDITIONS
= 6 V; f = 1 MHz
CB
C
BE
CE
= 5 mA
C
= 6 V; f = 1 MHz
= 0
E
= 0.1 mA
= 5 V
= 0.1 mA
10
2
P
20
10
2.5
25
MIN.
10
t p
1
T
Product specification
BFG10W/X
100
3
2
=
t p (s)
MAX.
t p
T
t
MBG431
1
V
V
V
pF
pF
A
UNIT