2SA2181 Sanyo Semiconductor Corporation, 2SA2181 Datasheet

2SA2181

Manufacturer Part Number

2SA2181

Description

Pnp Epitaxial Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SA2181.pdf (4 pages)

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Ordering number : EN8527

2SA2181

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

•

High-speed switching applications (switching regulator, driver circuit).

Adoption of MBIT processes.

Large current capacitance.

Low collector-to-emitter saturation voltage.

High-speed switching.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

PNP Epitaxial Planar Silicon Transistor

50V / 15A High-Speed Switching

Applications

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

h FE 1

h FE 2

Tstg

Cob

I CP

P C

I C

I B

f T

Tc=25 C

V CB =- -40V, I E =0A

V EB =- -4V, I C =0A

V CE =- -2V, I C =--330mA

V CE =- -2V, I C =--10A

V CE =- -10V, I C =--700mA

V CB =- -10V, f=1MHz

2SA2181

Conditions

N2505FA MS IM TB-00001826

min

200

Ratings

typ

Ratings

120

140

Continued on next page.

--55 to +150

max

150

--50

--15

--20

500

--10

--6

--3

No.8527-1/4

MHz

Unit

Related parts for 2SA2181

2SA2181 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA2181 PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Applications Symbol ...

Page 2

... Collector-to-Emitter Voltage 2SA2181 Symbol Conditions V CE (sat =--7.5A =--375mA V BE (sat =--7.5A =--375mA V (BR)CBO I C =--100 =0A V (BR)CEO I C =--1mA (BR)EBO I E =--100 = See specified Test Circuit. ...

Page 3

... Collector-to-Base Voltage (sat = --1 --0 --0. --0.01 --0.1 --1.0 Collector Current 2SA2181 1000 100 --1.0 --1.2 --1.4 --0.01 IT09989 1000 Ta= 100 --10 --0.01 IT09991 --1 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. 2SA2181 2.5 2.0 1.5 1.0 ...

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