SPF-5122Z Sirenza Microdevices, SPF-5122Z Datasheet - Page 2

• Manufacturer Part Number: SPF-5122Z
• Description: 50mhz To 4000mhz, Gaas Phemt Low Noise Mmic Amplifier
• Manufacturer: Sirenza Microdevices

SPF-5122Z
Typical RF Performance - Broadband Application Circuit with V
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
Typical RF Performance - Broadband Application Circuit with V
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
2 of 12
Absolute Maximum Ratings
Max Device Current (l
Max Device Voltage (V
Max RF Input Power
Max Dissipated Power
Max Junction Temperature (T
Operating Temperature Range (T
Max Storage Temperature
ESD Rating - Human Body Model
Moisture Sensitivity Level (MSL)
Operation of this device beyond any one of these limits may cause permanent
Bias Conditions should also satisfy the following expression:
Test Conditions: V
Test Conditions: V
Output Return Loss
Output Return Loss
Small Signal Gain
Input Return Loss
Small Signal Gain
Input Return Loss
Reverse Isolation
Reverse Isolation
(HBM)
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
I
D
Parameter
Parameter
Output P1dB
Output P1dB
V
Noise Figure
Noise Figure
Output IP3
Output IP3
D
<(T
Parameter
J
-T
L
)/R
D
D
TH
=5V, I
=3V, I
, j-l and T
D
D
)
)
DQ
DQ
Unit
Unit
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
=90mA, OIP
=58mA, OIP
J
)
L
=T
L
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support, contact RFMD at ([phone] or [e-mail].
)
LEAD
GHz*
GHz*
-29.0
-26.0
-32.0
-31.0
0.1
0.42
33.0
22.3
0.1
26.0
0.35
31.5
18.8
27.0
-9.5
-8.0
3
3
Tone Spacing=1MHz, P
Tone Spacing=1MHz, P
-65 to +150
-40 to + 85
Rating
Class 1B
MSL 1
GHz
GHz
120
660
150
-10.0
-19.5
-29.0
-28.5
-28.0
0.4
24.0
0.47
36.0
22.7
0.4
23.0
0.44
33.0
18.9
5.5
-9.0
27
GHz
GHz
-14.5
-24.0
-13.0
-23.5
-23.0
19.0
0.59
23.0
-17.0
18.5
0.58
34.5
0.9
0.9
19.1
38.0
OUT
OUT
per tone=0dBm, T
per tone=0dBm, T
Unit
dBm
mW
mA
D
D
°C
°C
°C
V
=5V, I
=3V, I
GHz
GHz
-20.0
-14.0
-20.0
-16.5
-18.0
-19.0
1.5
15.0
0.70
39.5
23.2
1.5
14.5
0.65
36.0
19.4
Preliminary
D
D
=90mA
=58mA
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
GHz
GHz
-21.0
-13.0
-18.5
-18.5
-16.5
13.0
0.64
12.5
36.5
-17.5
1.9
40.5
23.4
1.9
0.61
19.9
L
L
=25°C, Z
=25°C, Z
Caution! ESD sensitive device.
GHz
GHz
-22.0
-12.5
-19.0
-16.0
-16.0
-17.5
2.2
12.0
0.73
41.0
23.7
2.2
11.5
0.69
20.2
37.0
S
S
=Z
=Z
L
L
=50Ω, *Bias Tee Data @ 100MHz
=50Ω, *Bias Tee Data @ 100MHz
GHz
-22.5
-12.5
-16.5
GHz
-19.0
-15.5
-15.0
2.5
11.0
0.86
41.5
23.9
2.5
10.5
0.79
20.1
37.5
GHz
-15.0
-15.5
GHz
-13.5
-14.5
3.5
1.35
40.5
22.2
3.5
1.25
18.9
37.0
-9.0
6.0
-7.5
6.0
EDS-105470 Rev E
GHz
GHz
-11.5
-15.5
-13.5
-10.0
-14.0
-12.5
22.9
19.2
3.8
1.27
41.5
3.8
1.19
37.5
6.5
7.0