Product Description
Sirenza Microdevices’ SPF-2000 is a high linearity, low noise
0.25 m pHEMT. This 300 m device is ideally biased at 3V,20mA
for lowest noise performance. At 5V,40mA the device delivers
excellent output TOI of 32 dBm. It provides ideal performance
as driver stages in many commercial, industrial and military
LNA applications.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
[1] 100% tested - DC parameters tested on wafer.
[2] Sample tested - Samples pullled from each wafer lot. Sample test specifications are based on statistical data from sample test measurements.
[3] V
30
25
20
15
10
5
0
0
S y m b o l
DS
G m a x
N F
B V
B V
P
G
O IP
P
V
I
R
* I
S
V
G
I
D S S
D IS S
D Q
1 d B
1 d B
DQ
D S
T H
2 1
M IN
P
M
G S
G D
3
< P
DISS
5
is recommended for continuous reliable operation.
D e v ic e C h a r a c t e r is tic s :
M a x i m u m A v a i la b le G a i n
In s e rti o n G a i n
M i n i m u m N o i s e F i g u r e
O u tp u t 1 d B C o m p re s s i o n P o i n t
G a i n a t 1 d B C o m p re s s i o n P o i n t
O u tp u t T h i rd O rd e r In te rc e p t P o i n t
S a tu ra te d D ra i n C u rre n t
P i n c h o ff V o lta g e
G a te to S o u rc e B re a k d o w n V o lta g e
G a te to D ra i n B re a k d o w n V o lta g e
O p e ra ti n g V o lta g e
O p e ra ti n g C u rre n t
P o w e r D i s s i p a ti o n
Tra n s c o n d u c ta n c e
T h e r m a l R e s i s ta n c e
Typical Gain Performance
10
Gain
Frequency (GHz)
[2 ]
[1 ]
3V, 20mA
5V, 40mA
15
[3 ]
[3 ]
[3 ]
Gmax
[2 ]
[2 ]
20
[1 ]
[1 ]
Phone: (800) SMI-MMIC
25
T e s t C o n d it io n s ,
V d s = 3 V , Id s = 2 0 m A , T = 2 5 ° C
(u n le s s o th e r w is e n o te d )
Z
Z
Z
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
D ra i n - s o u rc e
D ra i n - s o u rc e , q u i e s c e n t
G S
G D
S
S
S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
G S
= Z
= Z
= G a m m a -o p t, Z
= 0 .3 m A , d ra i n o p e n
= 0 .3 m A , V
= 5 V , I
= 3 V , I
= 5 V , I
= 3 V , I
= 5 V , I
= 3 V , I
= 5 V , I
= 3 V , I
= 5 V , I
= 3 V , I
= 5 V , I
= 3 V , I
= 2 V , I
= -0 .2 5 V
S
L
* , Z
= 5 0 O h m s
30
L
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
D S
1
= Z
= 4 0 m A
= 2 0 m A
= 4 0 m A
= 2 0 m A
= 4 0 m A
= 2 0 m A
= 4 0 m A
= 2 0 m A
= 4 0 m A
= 2 0 m A
= 4 0 m A
= 2 0 m A
= 0 .1 5 0 m A
G S
L
*
= -3 .0 V
SPF-2000
Low Noise High Linearity
pHEMT GaAs FET
0.1 - 12 GHz Operation
Product Features
•
•
•
•
Applications
•
and Instrumentation
•
L
15 dB Gmax at 12GHz
1.25 dB F
+32 dBm Output IP3 at 12GHz
High IP3 LNA for VSAT, LMDS, Cellular Systems
Broadband Amplifiers
+20 dBm Output Power at 1dB Compression
= Z
L
*
MIN
F r e q u e n c y
at 12 GHz
1 2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
1 .9 G H z
4 .0 G H z
1 .9 G H z
2 .0 G H z
4 .0 G H z
2 .0 G H z
2 .0 G H z
2 .0 G H z
2 .0 G H z
2 .0 G H z
2 .0 G H z
T e s t
U n it s
d B m
d B m
d B m
d B m
d B m
d B m
d B m
d B m
d B m
d B m
d B m
d B m
C /W
m A
m S
m A
d B
d B
d B
d B
d B
d B
d B
W
V
V
V
V
http://www.sirenza.com
M in .
-1 .5
1 3
1 6
3 0
2 1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Preliminary
EDS-103295 Rev A
T y p .
2 0 .0
1 5 .0
1 7 .7
1 7 .0
1 3 .0
1 1 .0
-1 .0
1 1 2
-1 7
-1 7
1 1 0
0 .5
0 .6
1 .2
2 5
2 3
1 5
1 8
1 8
3 2
2 8
3 2
3 0
8 5
2 1
M a x .
-0 .5
1 4 0
5 .5
0 .2
2 5
1 7
2 0
5 5
-8
-8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-