3SK319 Renesas Electronics Corporation., 3SK319 Datasheet - Page 3

• Manufacturer Part Number: 3SK319
• Description: Mosfets Silicon N-channel Dual Gate Mos Fet Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

3SK319
Rev.2.00 Aug 10, 2005 page 3 of 7
200
150
100
20
16
12
50
30
24
18
12
8
4
0
6
0
0
Gate1 to Source Voltage V
Gate1 to Source Voltage V
V
V
Ambient Temperature Ta (°C)
DS
DS
Forward Transfer Admittance
Gate1 to Source Voltage
Maximum Channel Power
= 3.5 V
= 3.5 V
0.4
1
50
Drain Current vs.
vs. Gate1 Voltage
Dissipation Curve
V
0.8
2
1.5 V
G2S
2.5 V
100
= 1.0 V
1.2
3
1 V
2.0 V
V
1.5 V
G2S
150
1.6
4
G1S
G1S
2 V
= 3 V
2.5 V
(V)
(V)
200
2.0
5
16
25
20
15
10
12
20
16
12
20
8
4
5
8
4
0
0
0
Gate2 to Source Voltage
Drain to Source Voltage V
V
Typical Output Characteristics
Power Gain vs. Drain Current
DS
Gate2 to Source Voltage
Drain Current I
2
5
= 3.5 V
1
2.0 V
V
Drain Current vs.
G1S
1.6 V
1.5 V
1.4 V
1.3 V
1.0 V
0.9 V
1.2 V
1.1 V
10
= 1.7 V
4
2
V
1.2 V
G1S
1.4 V
= 1.0 V
15
1.8 V
6
3
D
V
V
f = 900 MHz
1.6 V
DS
G2S
(mA)
V
G2S
= 3.5 V
= 3 V
V
20
0.8 V
8
DS
4
G2S
= 3 V
(V)
(V)
10
25
5