3SK319 Renesas Electronics Corporation., 3SK319 Datasheet - Page 2

• Manufacturer Part Number: 3SK319
• Description: Mosfets Silicon N-channel Dual Gate Mos Fet Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

3SK319
Absolute Maximum Ratings
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Rev.2.00 Aug 10, 2005 page 2 of 7
Item
Item
V
V
Symbol
V
V
V
(BR)G1SS
(BR)G2SS
I
Coss
(BR)DSS
I
I
Crss
G1S(off)
G2S(off)
Ciss
DS(op)
G1SS
G2SS
|y
PG
NF
fs
|
Symbol
V
V
Tstg
Pch
Tch
V
G1S
G2S
I
DS
D
Min
0.5
0.5
0.5
1.3
0.9
±6
±6
18
—
—
18
—
—
6
0.019
Typ
0.7
0.7
1.6
1.2
1.4
24
21
—
—
—
—
—
4
±100
±100
Max
0.03
1.0
1.0
1.9
1.5
2.2
10
32
—
—
—
—
–55 to +150
Ratings
Unit
mA
mS
nA
nA
pF
pF
pF
dB
dB
150
150
V
V
V
V
V
±6
±6
20
6
I
I
I
V
V
V
V
V
V
V
I
V
I
V
I
D
G1
G2
D
D
D
G1S
G2S
DS
DS
DS
G2S
DS
DS
DS
= 200 A, V
= 10 mA , f = 1 kHz
= 10mA , f = 1MHz
= 10 mA , f = 900 MHz
= ±10 A, V
= ±10 A, V
= 5 V, V
= 5 V, V
= 3.5 V, V
= 3.5 V, V
= 3.5V, V
= 3.5 V, V
= ±5 V, V
= ±5 V, V
= 3 V
Test conditions
G2S
G1S
G2S
G1S
G2S
G2S
G1S
G2S
G1S
G2S
G1S
= 3 V, I
= 3 V, I
= 3V
= 1.1 V,
= 3 V
= 3 V
= V
= V
= V
= V
= V
G2S
Unit
mW
DS
DS
mA
DS
DS
V
V
V
(Ta = 25 C)
(Ta = 25 C)
D
D
C
C
= 0
= 0
= 100 A
= 100 A
= 0
= 0
= 0