3SK0272 Panasonic Corporation of North America, 3SK0272 Datasheet - Page 2

• Manufacturer Part Number: 3SK0272
• Description: Silicon N-channel 4-pin Mos Fet
• Manufacturer: Panasonic Corporation of North America

High Frequency FETs
2
200
175
150
125
100
75
50
25
48
40
32
24
16
24
20
16
12
0
8
0
–2.4
8
4
0
–1.6
Gate 1 to source voltage V
Gate 2 to source voltage V
0
Ambient temperature Ta ( ˚C )
20
–2.0
–1.2
40
– 0.8
–1.6
PG
I
P
D
60
D
– 0.4
–1.2
80
V
V
Ta
G2S
100
G1S
– 0.8
0
V
1.0V
0.5V
0V
0.5V
120
V
f=800MHz
Ta=25˚C
G2S
V
DS
G1S
V
Ta=25˚C
– 0.4
=1.5V
0.4
=5V
G2S
G1S
DS
140
=1.0V
– 0.5V
– 1.0V
=5V
0V
160
( V )
( V )
0.8
0
36
30
24
18
12
48
40
32
24
16
12
10
6
0
8
0
8
6
4
2
0
–1.6
Gate 1 to source voltage V
Gate 1 to source voltage V
–3
0
Drain to source voltage V
–1.2
–2
2
| Y
NF
– 0.8
I
–1
4
D
fs
|
– 0.4
6
0
V
V
V
DS
G1S
1.0V
0.5V
0V
V
G1S
G2S
8
1
0
V
1.0V
0.5V
0V
V
f=800MHz
Ta=25˚C
=1.5V
G2S
DS
V
Ta=25˚C
V
V
f=1kHz
Ta=25˚C
=1.5V
DS
0.4
G2S
10
G1S
=5V
G1S
G1S
DS
2
– 0.3V
– 0.6V
– 0.9V
–1.2V
=5V
=0
=0V
( V )
( V )
( V )
0.8
12
3
–20
–40
–60
0.6
0.5
0.4
0.3
0.2
0.1
48
40
32
24
16
60
40
20
8
0
–2.4
Gate 1 to source voltage V
0
0
Gate 2 to source voltage V
0.1
–6
Drain to source voltage V
V
Ta=25˚C
DS
=5V
–2.0
0.3
–4
C
iss
–1.6
PG
I
–2
, C
1
D
oss
–1.2
3
0
V
V
G1S
V
f=1MHz
Ta=25˚C
G2S
– 0.8
G1S
V
10
3SK272
2
V
C
C
DS
=V
V
f=800MHz
Ta=25˚C
G2S
iss
oss
DS
– 0.4
G2S
DS
=1.0V
G1S
30
=5V
G2S
– 0.5V
4
–1.0V
=–6V
0.5V
( V )
0V
( V )
100
( V )
4
6