3SK0272 Panasonic Corporation of North America, 3SK0272 Datasheet
3SK0272
Manufacturer Part Number
3SK0272
Description
Silicon N-channel 4-pin Mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.3SK0272.pdf
(3 pages)
High Frequency FETs
3SK272
GaAs N-Channel MES FET
For VHF-UHF amplification
Drain to Source voltage
Gate 1 to Source voltage
Gate 2 to Source voltage
Drain current
Gate 1 current
Gate 2 current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate 2 to Drain current
Gate 1 cut-off current
Gate 2 cut-off current
Drain cut-off current
Gate 1 to Source cut-off voltage
Gate 2 to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Power gain
Noise figure
Gain reduction
Low noise-figure (NF)
Large power gain PG
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
Features
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
Symbol
V
V
V
I
I
I
P
T
T
Symbol
I
I
I
I
I
V
V
| Y
C
C
C
PG
NF
G
D
G1
G2
DSS
G2DO
G1SS
G2SS
DSX
D
ch
stg
iss
oss
rss
DS
G1S
G2S
G1SC
G2SC
R
fs
(Ta = 25°C)
|
(Ta = 25°C)
V
V
V
V
V
V
V
V
V
f = 1MHz
V
V
V
DS
DS
DS
G2D
DS
DS
DS
DS
DS
DS
DS
G2S
55 to +150
Ratings
= 5V, I
= 5V, V
= 5V, V
= V
= V
= 13V, V
= 5V, V
= 5V, V
= 5V, V
= 5V, I
150
150
= 1.5V, f = 800MHz
13
50
= 13V (G1, S = Open)
1
1
6
6
G2S
G1S
D
AGC
= 10mA, V
D
Conditions
= 0, V
= 0, V
G1S
G2S
G1S
G1S
= 10mA
= 1.5V/ 3.5V, f = 800MHz
G1S
= 0, V
= V
= 0, I
= 0, I
= 3.5V, V
G1S
G2S
Unit
mW
mA
mA
mA
°C
°C
G2S
G2S
V
V
V
D
D
= 6V
= 6V
G2S
= 1.5V, f = 1kHz
= 200 A
= 200 A
= 6V
= 0
G2S
= 0
Marking Symbol: DU
min
8.5
18
10
37
0.2±0.1
0.02
0.425
typ
0.4
0.3
1.8
23
16
45
S-Mini Type Package (4-pin)
1.25±0.10
2.1±0.1
max
0.04
1.2
2.8
35
50
50
3.5
3.5
20
20
2
0.425
EIAJ: SC-82
1: Drain
2: Source
3: Gate1
4: Gate2
unit: mm
Unit
mA
mS
dB
dB
dB
pF
pF
pF
V
V
A
A
A
A
1
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3SK0272 Summary of contents
Page 1
High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification Features Low noise-figure (NF) Large power gain PG S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. Absolute Maximum Ratings Parameter Symbol ...
Page 2
High Frequency FETs 200 175 150 125 100 100 120 140 160 Ambient temperature Ta ( ˚ G2S 48 V =5V DS Ta=25˚C 40 ...
Page 3
High Frequency FETs G1S G2S Ta=25˚C 75˚C –25˚ –2.0 –1.6 –1.2 – 0.8 – 0 Gate 1 to source voltage V G1S ...