ATF-521P8 Avago Technologies, ATF-521P8 Datasheet - Page 2

• Manufacturer Part Number: ATF-521P8
• Description: Atf-521p8 Gaas Field Effect
• Manufacturer: Avago Technologies

2
ATF-521P8 Absolute Maximum Ratings
I
I
P
P
T
T
Notes:
1. Operation of this device in excess of any one of these parameters may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT
4. Channel to board thermal resistance measured using 150°C Liquid Crystal Measurement method.
5. Device can safely handle +27dBm RF Input Power provided IGS is limited to 46mA. IGS at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated to this product may have nominal values
6. Measurements are made on production test board, which represents a trade‑off between optimal OIP3, P1dB and VSWR. Circuit losses have
180
150
120
Symbol
V
V
V
θ
DS
GS
Figure 4. Gain @ 2 GHz, 4.5 V, 200 mA.
Nominal = 17.2 dB, LSL = 15.5 dB,
USL = 18.5 dB.
90
60
30
CH
diss
in max.
STG
ch_b
DS
GS
GD
0
Figure 1. Typical I-V Curves.
(V
anywhere between the upper and lower limits.
been de‑embedded from actual measurements.
15
600
500
400
300
200
100
GS
0
= 0.1 V per step)
0
16
2
-3 Std
GAIN (dB)
17
V
DS
4
(V)
Vgs = 0.6V
Cpk = 2.13
Stdev = 0.21
+3 Std
18
0.8V
0.7V
0.5V
0.4V
Parameter
Gate Drain Voltage
Drain Current
Total Power Dissipation
Thermal Resistance
Drain – Source Voltage
Gate –Source Voltage
Gate Current
RF Input Power
Channel Temperature
Storage Temperature
6
B
19
is 25°C. Derate 22 mW/°C for T
8
[1]
[2]
[5, 6]
300
250
200
150
100
180
150
120
Figure 5. P1dB @ 2 GHz, 4.5 V, 200 mA.
Nominal = 26.5 dBm, LSL = 25 dBm.
50
Figure 2. NF @ 2 GHz, 4.5 V, 200 mA.
Nominal = 1.5 dB.
90
60
30
0
0
25
[2]
[4]
0
[2]
[2]
[3]
0.5
25.5
-3 Std
1
P1dB (dBm)
26
-3 Std
NF (dB)
B
> 83°C.
1.5
26.5
Units
V
V
V
mA
mA
dBm
°C
°C
°C/W
W
Cpk = 4.6
Stdev = 0.11
Stdev = 0.19
+3 Std
+3 Std
2
27
2.5
27.5
3
150
120
Figure 3. OIP3 @ 2 GHz, 4.5 V, 200 mA.
Nominal = 41.9 dBm, LSL = 38.5 dBm.
90
60
30
0
37
-3 Std
39
Maximum
Absolute
7
‑5 to 1
‑5 to 1
500
46
1.5
27
150
‑65 to 150
45
41
OIP3 (dBm)
43
45
Cpk = 0.86
Stdev = 1.32
+3 Std
47
49