STH165N10F4-2 STMicroelectronics, STH165N10F4-2 Datasheet

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STH165N10F4-2

Manufacturer Part Number
STH165N10F4-2
Description
N-channel 100 V, 4.1 M? , 160 A To-220, H2pak Stripfet? Deepgate? Power Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Features
Application
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.
Table 1.
June 2009
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STH165N10F4-2
STP165N10F4
N-channel enhancement mode
100% avalanche rated
Low gate charge
Very low on-resistance
Switching applications
STH165N10F4-2
STP165N10F4
Type
Order codes
Device summary
100 V
100 V
V
DSS
N-channel 100 V, 4.1 mΩ , 160 A TO-220, H
R
DS(on)
< 5.1 mΩ
< 5.5 mΩ
165N10F4
165N10F4
Marking
max
STripFET™ DeepGATE™ Power MOSFET
160 A
120 A
Doc ID 15781 Rev 1
I
D
Figure 1.
Package
TO-220
H²PAK
2
H²PAK
Internal schematic diagram
STH165N10F4-2
1
3
STP165N10F4
3
Tape and reel
Packaging
TO-220
Tube
Preliminary data
www.st.com
2
1
PAK
2
3
1/12
12

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STH165N10F4-2 Summary of contents

Page 1

... STripFET™ DeepGATE™ Power MOSFET max I DS(on) D < 5.1 mΩ 160 A < 5.5 mΩ 120 A Figure 1. Marking 165N10F4 165N10F4 Doc ID 15781 Rev 1 STH165N10F4-2 STP165N10F4 Preliminary data H²PAK TO-220 Internal schematic diagram Package Packaging H²PAK Tape and reel TO-220 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 15781 Rev 1 STH165N10F4-2, STP165N10F4 ...

Page 3

... STH165N10F4-2, STP165N10F4 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) E Single pulse avalanche energy ...

Page 4

... (see Figure 3) Parameter Test conditions 4.7 Ω (see Figure 4.7 Ω (see Figure 2) Doc ID 15781 Rev 1 STH165N10F4-2, STP165N10F4 Min. Typ 100 GS =125 ° 250 µ ( 4 4.1 D Min. Typ. 10500 - ...

Page 5

... STH165N10F4-2, STP165N10F4 Table 7. Source drain diode Symbol I Source-drain current SD (3) I Source-drain current (pulsed) SDM (4) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. For TO-220 2. For H²PAK 3. Pulse width limited by safe operating area. 4. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 6

... Switching times test circuit for resistive load Figure 4. Test circuit for inductive load switching and diode recovery times Figure 6. Unclamped inductive waveform 6/12 STH165N10F4-2, STP165N10F4 Figure 3. Gate charge test circuit Figure 5. Unclamped inductive load test circuit Figure 7. Switching time waveform Doc ID 15781 Rev 1 ...

Page 7

... STH165N10F4-2, STP165N10F4 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15781 Rev 1 Package mechanical data ® ...

Page 8

... Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Doc ID 15781 Rev 1 STH165N10F4-2, STP165N10F4 inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.051 0.244 0.256 0.094 0.107 0.511 0.551 0.137 0.154 0.645 1.137 0.147 0.151 ...

Page 9

... STH165N10F4-2, STP165N10F4 Table 8. H²PAK 2 leads mechanical data Dim Min. Typ. 4.30 0.03 1.17 4.98 0.50 0.78 10.00 7.171 - 15.30 1.27 4.93 7.45 1.5 2.6 0.20 0° Doc ID 15781 Rev 1 Package mechanical data Max. 4.80 0.20 1.37 5.18 0.90 0.85 10.40 7.971 15.80 1.40 5.23 7.85 1.7 2.9 0.60 8° 9/12 ...

Page 10

... Package mechanical data Figure 8. H²PAK 2 leads drawing Figure 9. H²PAK 2 recommended footprint 10/12 STH165N10F4-2, STP165N10F4 Doc ID 15781 Rev 1 8159712_B 8159712_B ...

Page 11

... STH165N10F4-2, STP165N10F4 5 Revision history Table 9. Document revision history Date 19-May-2009 Revision 1 First release Doc ID 15781 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15781 Rev 1 STH165N10F4-2, STP165N10F4 ...

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