MTB9N25E ON Semiconductor, MTB9N25E Datasheet - Page 4

• Manufacturer Part Number: MTB9N25E
• Description: Tmos Power Fet 9.0 Amperes, 250 Volts
• Manufacturer: ON Semiconductor

1.2
1.0
0.8
0.6
0.4
0.2
2.5
2.0
1.5
1.0
0.5
18
15
12
0
0
9
6
3
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
V
V
I
T
D
GS
J
GS
= 4.5 A
−25
Figure 5. On−Resistance Variation with
= 25°C
Figure 1. On−Region Characteristics
= 10 V
= 10 V
3
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
T
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
4
and Temperature
6
25
T
Temperature
J
= 100°C
− 55°C
25°C
50
9
6
9 V
V
GS
TYPICAL ELECTRICAL CHARACTERISTICS
= 10 V
75
12
8
100
15
10
125
http://onsemi.com
7 V
6 V
5 V
8 V
150
12
18
4
1000
100
0.6
0.5
0.4
0.3
0.1
10
18
15
12
1
9
6
3
0
0
0
2
Figure 4. On−Resistance versus Drain Current
T
V
V
J
DS
GS
= 25°C
≥ 10 V
= 0 V
Figure 6. Drain−To−Source Leakage
Figure 2. Transfer Characteristics
3
V
3
V
50
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Current versus Voltage
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
6
4
100
T
V
J
GS
= 125°C
100°C
25°C
15 V
= 10 V
5
9
150
T
12
J
6
= −55°C
200
15
100°C
7
25°C
2