MTB9N25E ON Semiconductor, MTB9N25E Datasheet

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MTB9N25E

Manufacturer Part Number
MTB9N25E
Description
Tmos Power Fet 9.0 Amperes, 250 Volts
Manufacturer
ON Semiconductor
Datasheet
MTB9N25E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET
D
N−Channel Enhancement−Mode Silicon
Gate
any existing surface mount package which allows it to be used in
applications that require the use of surface mount components with
higher power and lower R
E−FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
The D
Discrete Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a
Diode is Characterized for Use in Bridge Circuits
I
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Robust High Voltage Termination
2
DSS
PAK for Surface Mount
and V
2
PAK package has the capability of housing a larger die than
DS(on)
Specified at Elevated Temperature
DS(on)
capabilities. This advanced TMOS
1
9.0 AMPERES, 250 VOLTS
TMOS POWER FET
R
http://onsemi.com
DS(on)
®
= 0.45 W
Publication Order Number:
CASE 418B−02
G
D
Style 2
2
PAK
D
MTB9N25E/D
S

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MTB9N25E Summary of contents

Page 1

... Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 http://onsemi.com TMOS POWER FET 9.0 AMPERES, 250 VOLTS R DS(on) ® 0. PAK CASE 418B−02 Style Publication Order Number: MTB9N25E/D ...

Page 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted) C Drain−to−Source Voltage Drain−to−Gate Voltage (R = 1.0 MΩ) GS Gate−to−Source Voltage — Continuous — Non−Repetitive (t Drain Current — Continuous — Continuous @ 100°C — Single Pulse (t ≤ 10 μs) ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 250 Vdc Vdc 250 Vdc, ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 1 ...

Page 5

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 6

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 9.0 7.5 6.0 4.5 3.0 1.5 0 0.5 Figure ...

Page 7

Maximum energy at currents below rated continuous I assumed to equal the values indicated. http://onsemi.com 7 can safely be D ...

Page 8

SINGLE PULSE T = 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area ...

Page 9

INFORMATION FOR USING THE D RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection 0.42 ...

Page 10

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of ...

Page 11

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 12

... D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTB9N25E/D ...

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