MTB75N03HDL ON Semiconductor, MTB75N03HDL Datasheet - Page 6

• Manufacturer Part Number: MTB75N03HDL
• Description: Power Mosfet 75 Amps, 25 Volts, Logic Level
• Manufacturer: ON Semiconductor

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
total power averaged over a complete switching cycle must
not exceed (T
in switching circuits with unclamped inductive loads. For
DM
1000
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
A power MOSFET designated E−FET can be safely used
100
10
1
) nor rated voltage (V
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
GS
C
= 25 C
= 20 V
J(MAX)
V
DS
r
, t
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
f
) does not exceed 10 s. In addition the
Safe Operating Area
− T
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1
100 s
C
)/(R
LIMIT
DSS
1 ms
JC
) is exceeded, and that the
).
10 ms
10
dc
SAFE OPERATING AREA
C
) of 25 C.
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MTB75N03HDL
100
6
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non−linearly with an increase of peak current in avalanche
and peak junction temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
280
240
200
160
120
Although many E−FETs can withstand the stress of
80
40
0
25
Figure 12. Maximum Avalanche Energy versus
DM
T
), the energy rating is specified at rated
J
50
, STARTING JUNCTION TEMPERATURE ( C)
Starting Junction Temperature
D
), in accordance with industry
75
100
D
125
I
can safely be
D
= 75 A
150