MTB75N03HDL ON Semiconductor, MTB75N03HDL Datasheet
MTB75N03HDL
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MTB75N03HDL Summary of contents
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... D PAK CASE 418B 2 1 STYLE 2 3 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain T75N03HDL YWW Gate Drain Source T75N03HDL = Device Code Y = Year WW = Work Week ORDERING INFORMATION Package Shipping 2 D PAK 50 Units/Rail 2 D PAK 800/Tape & Reel Publication Order Number: MTB75N03HDL/D ...
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... Reverse Recovery Time Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 3. Switching characteristics are independent of operating junction temperature. 4. Reflects typical values. Max limit − Typ SIGMA MTB75N03HDL ( unless otherwise noted) J Symbol (C 2.0) (Note 4 (BR)DSS = 0 V) ...
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... D Figure 3. On−Resistance versus Drain Current and Temperature 37 1.6 1.2 0.8 0.4 0 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature MTB75N03HDL 150 4 120 1.4 1.6 1 Figure 2. Transfer Characteristics ...
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... GG GSP 15000 12000 9000 6000 3000 MTB75N03HDL POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...
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... The abruptness of diode reverse recovery effects the amount of radiated noise, voltage spikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon 0.5 Figure 10. Diode Forward Voltage versus Current MTB75N03HDL 10000 1000 100 T ...
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... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area MTB75N03HDL SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified ...
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... 0. Figure 14. Diode Reverse Recovery Waveform MTB75N03HDL P (pk DUTY CYCLE 1.0E−03 1.0E−02 t, TIME (s) Figure 13. Thermal Response 3 R Board material = 0.065 mil FR−4 2.5 Mounted on the minimum recommended footprint Collector/Drain Pad Size 2 ...
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... Figure 16. Thermal Resistance versus Drain Pad MTB75N03HDL 2 PAK SURFACE MOUNT PACKAGE interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.33 8.38 0.08 2.032 ...
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... C. The soldering temperature and time shall not exceed 260 C for more than 10 seconds. MTB75N03HDL board, the power dissipation can be doubled using the same footprint. SOLDER STENCIL GUIDELINES ...
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... C 150 C 100 TIME ( MINUTES TOTAL) MTB75N03HDL TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile ...
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... PACKAGE DIMENSIONS −B− −T− SEATING PLANE 0.13 (0.005 MTB75N03HDL 2 D PAK CASE 418B−03 ISSUE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM STYLE 2: http://onsemi.com 11 INCHES ...
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... Email: ONlit−asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone: 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 MTB75N03HDL/D ...