MGSF1P02ELT1 ON Semiconductor, MGSF1P02ELT1 Datasheet - Page 2

• Manufacturer Part Number: MGSF1P02ELT1
• Description: Power Mosfet 750 Mamps, 20 Volts P-channel Sot-23
• Manufacturer: ON Semiconductor

1. Pulse Test: Pulse Width
2. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1.)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2.)
SOURCE–DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS =
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Continuous Current
Pulsed Current
Forward Voltage (Note 2.) (V GS = 0 Vdc, I S = 0.6 Adc)
(V GS = 0 Vdc, I D = 10 Adc)
(V DS = 16 Vdc, V GS = 0 Vdc)
(V DS = 16 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 Adc)
(V GS = 4.5 Vdc, I D = 0.75 Adc)
(V GS = 2.5 Vdc, I D = 0.5 Adc)
Figure 1. Transfer Characteristics
300 µs, Duty Cycle
Characteristic
TYPICAL ELECTRICAL CHARACTERISTICS
8.0 Vdc, V DS = 0 Vdc)
(T A = 25 C unless otherwise noted)
(V DS = 16 Vdc, I D = 1.5 Adc,
(V DD = 5 Vdc, I D = 1.0 Adc,
(V DD
R L = 5 Ω, R G = 6 Ω)
2%.
(V DG = 5.0 Vdc)
(V DS = 5.0 Vdc)
(V DS = 5.0 Vdc)
V GS = 4.0 Vdc)
5 Vdc, I D
MGSF1P02ELT1
http://onsemi.com
1.0 Adc,
2
V (BR)DSS
V GS(th)
Symbol
r DS(on)
t d(on)
t d(off)
I DSS
I GSS
C oss
C rss
V SD
C iss
I SM
Figure 2. On–Region Characteristics
Q T
I S
t r
t f
Min
0.7
20
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5500
0.22
0.40
Typ
140
130
200
200
1.0
9.5
50
32
–
–
–
–
–
–
–
Max
1.25
0.26
0.50
0.75
1.0
0.6
1.0
10
100
–
–
–
–
–
–
–
–
–
Ohms
nAdc
Unit
Vdc
Vdc
pC
Adc
pF
ns
A
V