MGSF1P02ELT1 ON Semiconductor, MGSF1P02ELT1 Datasheet

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MGSF1P02ELT1

Manufacturer Part Number
MGSF1P02ELT1
Description
Power Mosfet 750 Mamps, 20 Volts P-channel Sot-23
Manufacturer
ON Semiconductor
Datasheet

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P–Channel SOT–23
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
November, 2000 – Rev. 2
MAXIMUM RATINGS
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
Total Power Dissipation @ T A = 25 C
Operating and Storage Temperature
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
These miniature surface mount MOSFETs low R DS(on) assure
Low R DS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
Semiconductor Components Industries, LLC, 2000
Range
Purposes, 1/8 from case for 10
seconds
– Continuous @ T A = 25 C
– Pulsed Drain Current (t p
Rating
(T J = 25 C unless otherwise noted)
Preferred Device
10 s)
Symbol
T J , T stg
V DSS
R JA
V GS
I DM
P D
T L
I D
– 55 to
Value
2000
750
400
150
300
260
20
8.0
1
Unit
Vdc
Vdc
mW
C/W
mA
C
C
Preferred devices are recommended choices for future use
and best overall value.
MGSF1P02ELT1
MGSF1P02ELT3
1
Device
2
W
ORDERING INFORMATION
R DS(on) = 260 mW
3
http://onsemi.com
PIN ASSIGNMENT
750 mAMPS
20 VOLTS
= Work Week
1
CASE 318
Package
STYLE 21
SOT–23
SOT–23
SOT–23
P–Channel
Publication Order Number:
3
2
10,000 Tape & Reel
MGSF1P02ELT1/D
3000 Tape & Reel
Shipping
MARKING
DIAGRAM
PE
W

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MGSF1P02ELT1 Summary of contents

Page 1

... VOLTS R DS(on) = 260 mW P–Channel MARKING DIAGRAM 3 SOT–23 PE CASE 318 W STYLE Work Week PIN ASSIGNMENT ORDERING INFORMATION Device Package Shipping SOT–23 3000 Tape & Reel SOT–23 10,000 Tape & Reel Publication Order Number: MGSF1P02ELT1/D ...

Page 2

... Pulsed Current Forward Voltage (Note 2 Vdc 0.6 Adc) 300 µs, Duty Cycle 1. Pulse Test: Pulse Width 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. Transfer Characteristics MGSF1P02ELT1 ( unless otherwise noted) Symbol V (BR)DSS V GS(th) r DS(on 5.0 Vdc ...

Page 3

... TYPICAL ELECTRICAL CHARACTERISTICS Figure 3. On–Resistance versus Drain Current Figure 5. On–Resistance Variation with Temperature Figure 7. Body Diode Forward Voltage MGSF1P02ELT1 Figure 4. On–Resistance versus Drain Current Figure 6. Gate Charge Figure 8. Capacitance Variation http://onsemi.com 3 ...

Page 4

... When using infrared heating with the reflow soldering method, the difference shall be a maximum MGSF1P02ELT1 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. ...

Page 5

... MGSF1P02ELT1 PACKAGE DIMENSIONS SOT–23 (TO–236 http://onsemi.com CASE 318–08 ISSUE ...

Page 6

... Notes MGSF1P02ELT1 http://onsemi.com 6 ...

Page 7

... Notes MGSF1P02ELT1 http://onsemi.com 7 ...

Page 8

... Email: ONlit–asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MGSF1P02ELT1/D ...

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