IPD160N04LG Infineon Technologies Corporation, IPD160N04LG Datasheet - Page 7

• Manufacturer Part Number: IPD160N04LG
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
45
40
35
30
25
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
0
20
150 °C
t
T
AV
100 °C
j
10
60
[°C]
[µs]
1
25 °C
100
10
2
140
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=30 A pulsed
g s
4
Q
Q
gate
g
Q
sw
[nC]
Q
g d
IPD160N04L G
8
8 V
32 V
Q
20 V
g ate
2007-12-06
12