IPD160N04LG Infineon Technologies Corporation, IPD160N04LG Datasheet - Page 4

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IPD160N04LG

Manufacturer Part Number
IPD160N04LG
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
35
30
25
20
15
10
DS
5
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
10
DC
0
T
V
C
DS
100
[°C]
[V]
10
100 µs
1
1 ms
10 ms
150
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
=f(t
0.1
10
35
30
25
20
15
10
C
1
5
0
10
); V
p
0
0
)
-6
0.01
0.5
0.02
0.2
0.05
0.1
GS
≥10 V
single pulse
10
p
0
-5
/T
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPD160N04L G
0
-2
150
10
0
-1
2007-12-06
200
10
1
0

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