TK60A08J1 TOSHIBA Semiconductor CORPORATION, TK60A08J1 Datasheet - Page 2

• Manufacturer Part Number: TK60A08J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K60A08J
1
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
⎪Y
I
C
Q
I
C
C
Q
Q
GSS
DSS
V
t
t
Qg
oss
on
off
gs1
t
t
iss
rss
SW
gd
th
fs
r
f
Symbol
⎪
V
I
I
DRP
Q
DR
DSF
t
rr
rr
V
V
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
GS
Duty < = 1%, t
= 10 mA, V
= 10 mA, V
0 V
10 V
= ±16 V, V
= 75 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10V, V
∼ − 60 V, V
∼ − 60 V, V
∼ − 60 V, V
I
I
dI
DR
DR
DR
2
= 60 A, V
= 60 A, V
(Ta = 25°C)
/dt = 50 A/μs
Test Condition
D
D
D
GS
GS
GS
D
GS
w
GS
GS
GS
= 1 mA
= 30A
= 30 A
DS
Test Condition
= 30A
= 10 μs
= 0 V, f = 1 MHz
= 0 V
= -20 V
= 0 V
= 5 V, I
= 10 V, I
= 10 V, I
GS
GS
= 0 V
⎯
⎯
= 0 V
= 0 V,
V
I
D
DD
D
= 30 A
D
D
= 60A
∼ − 30 V
= 60A
= 60A
R
L
V
= 1 Ω
OUT
Min
1.1
Min
75
60
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5450
1260
Typ.
120
320
7.1
6.2
Typ.
−0.9
20
15
96
48
86
16
20
27
⎯
⎯
⎯
⎯
⎯
5
63
63
⎯
⎯
TK60A08J1
2007-02-05
Max
±10
2.3
9.3
7.8
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
−1.2
240
60
⎯
⎯
Unit
mΩ
μA
μA
pF
nC
ns
Unit
V
V
S
nC
ns
A
A
V