TK60A08J1 TOSHIBA Semiconductor CORPORATION, TK60A08J1 Datasheet
TK60A08J1
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TK60A08J1 Summary of contents
Page 1
... 498 2 150 °C ch −55~150 T °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK60A08J1 Unit Gate 2: Drain 3: Source JEDEC - JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Internal Connection 2007-02-05 ...
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... Symbol Test Condition ⎯ ⎯ I DRP = DSF / A/μ TK60A08J1 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 10 ⎯ ⎯ 75 ⎯ ⎯ 60 ⎯ 1.1 2.3 ⎯ 7.1 9.3 ⎯ 6.2 7.8 ⎯ 60 120 ⎯ ...
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... Drain-source voltage 0.8 0.6 0.4 0 Gate-source voltage V GS 100 Common source Tc = 25°C Pulse Test 100 3 TK60A08J1 I – Common source Tc = 25°C 4.25 Pulse Test 4 3.75 3.5 3. (V) V – Common source Tc = 25°C Pulse Test ...
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... C oss rss 0 100 −80 −40 100 Common source 25°C Pulse Test 200 0 4 TK60A08J1 − 0.8 1.2 1.6 2.0 − Common source 1mA Pulse Test 120 160 Case temperature Tc (°C) ...
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... Pulse width t (s) w 500 400 300 200 100 Channel temperature (initial) T 100 20 V −5 V Test circuit Ω 200 μ TK60A08J1 t T Duty = t (ch-c) = 2.78°C – 100 125 150 (° VDSS ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK60A08J1 20070701-EN 2007-02-05 ...