STY34NB50F STMicroelectronics, STY34NB50F Datasheet
STY34NB50F
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STY34NB50F Summary of contents
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... Pulse width limited by safe operating area December 1999 PowerMESH I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 di/ STY34NB50F MOSFET Max247 Value Unit 500 V 500 21.4 A 136 A 450 W o 3.61 W/ 4.5 V/ns o -65 to 150 ...
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... STY34NB50F THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...
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... G GS (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 DD j (see test circuit, figure 5) Thermal Impedance STY34NB50F Min. Typ. Max 140 196 38 61 Min. Typ. Max Min. Typ. Max. 34 136 1.6 ...
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... STY34NB50F Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STY34NB50F 5/8 ...
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... STY34NB50F Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... Max247 MECHANICAL DATA mm DIM. MIN. TYP. A 4.70 A1 2.20 b 1.00 b1 2.00 b2 3.00 c 0.40 D 19.70 e 5.35 E 15.30 L 14.20 L1 3.70 inch MAX. MIN. TYP. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 STY34NB50F MAX. P025Q 7/8 ...
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... STY34NB50F Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...