PHB63NQ03LT NXP Semiconductors, PHB63NQ03LT Datasheet - Page 5

• Manufacturer Part Number: PHB63NQ03LT
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Characteristics
Table 4:
T
9397 750 09822
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
GS
DD
T
T
T
T
T
T
T
T
T
= 25 A; V
= 10 A; dI
= 250 A; V
= 1 mA; V
= 50 A; V
Rev. 01 — 14 June 2002
j
j
j
j
j
j
j
j
j
= 30 V; V
= 20 V; V
= 5 V; I
= 10 V; I
= 0 V; V
= 15 V; I
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
D
GS
DD
S
DS
DS
D
D
/dt = 100 A/ s; V
= 25 A;
GS
GS
= 25 A;
= 25 A; V
= 0 V;
= 15 V; V
DS
= V
= 25 V; f = 1 MHz;
= 0 V
PHP/PHB/PHD63NQ03LT
= 0 V
= 0 V
GS
;
Figure 12
Figure 7
Figure 9
Figure 7
GS
GS
= 5 V;
= 4.5 V; R
and
GS
and
Figure 13
= 0 V
8
Figure 11
8
G
= 5.6
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Min
30
27
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.9
-
-
0.05
-
10
15
24
11
9.6
4
3.2
920
275
110
12
140
10.5
14
0.95
23
12
Max
-
-
2.5
-
2.9
1
500
100
17.7
28.3
13
-
-
-
-
-
-
-
-
-
-
1.2
-
-
5 of 14
Unit
V
V
V
V
V
V
nA
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A
A