PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 2

• Manufacturer Part Number: PHB119NQ06T
• Description: N-channel Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 13176
Product data
Type number
PHP119NQ06T
PHB119NQ06T
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
TO-220AB
D
2
-PAK
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78
Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Conditions
25 C
25 C
T
T
T
T
unclamped inductive load; I
t
V
p
mb
mb
mb
mb
mb
mb
GS
= 0.1 ms; V
Rev. 01 — 05 May 2004
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; starting at T
T
T
j
j
175 C
175 C; R
Figure 1
DD
GS
GS
= 10 V;
55 V; R
= 10 V;
p
p
GS
N-channel TrenchMOS™ standard level FET
j
= 20 k
10 s;
10 s
= 25 C
Figure 2
GS
Figure 2
D
= 50 ;
PHP/PHB119NQ06T
= 75 A;
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
55
75
75
240
200
+175
+175
75
240
280
20
Version
2 of 13
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C