PHB87N03T NXP Semiconductors, PHB87N03T Datasheet - Page 3

• Manufacturer Part Number: PHB87N03T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
AVALANCHE LIMITING VALUE
December 1997
TrenchMOS
Standard level FET
j
SYMBOL PARAMETER
I
I
V
t
Q
SYMBOL PARAMETER
W
DR
DRM
rr
= 25˚C unless otherwise specified
SD
rr
DSS
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Drain-source non-repetitive
unclamped inductive turn-off
energy
transistor
CONDITIONS
I
I
I
V
CONDITIONS
I
V
F
F
F
D
GS
GS
= 25 A; V
= 75 A; V
= 75 A; -dI
= 45 A; V
= -10 V; V
= 10 V; R
3
GS
GS
DD
F
/dt = 100 A/ s;
GS
= 0 V
= 0 V
R
= 25 V
15 V;
= 50 ; T
mb
= 25 ˚C
MIN.
MIN.
-
-
-
-
-
-
-
TYP.
TYP.
0.95
0.15
1.0
95
-
-
-
Product specification
PHB87N03T
MAX.
MAX.
240
200
1.2
75
-
-
-
Rev 1.200
UNIT
UNIT
mJ
ns
A
A
V
V
C