PHB50N06T NXP Semiconductors, PHB50N06T Datasheet - Page 5

• Manufacturer Part Number: PHB50N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1997
TrenchMOS
Standard level FET
Fig.9. Normalised drain-source on-state resistance.
gfs/S
I
a = R
ID/A
D
25
20
15
10
Fig.8. Typical transconductance, T
100
2.5
1.5
0.5
5
0
= f(V
80
60
40
20
-100
2
1
0
0
0
Fig.7. Typical transfer characteristics.
a
DS(ON)
GS
g
) ; conditions: V
fs
-50
/R
= f(I
2
20
DS(ON)25 ˚C
Tj/C =
BUK959-60
D
); conditions: V
transistor
0
4
175
Tmb / degC
40
= f(T
25
50
VGS/V
ID/A
DS
6
Rds(on) normlised to 25degC
j
); I
= 25 V; parameter T
D
60
100
= 25 A; V
DS
8
= 25 V
150
j
80
= 25 ˚C .
10
GS
= 5 V
200
12
100
j
5
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
V
2.5
1.5
Fig.12. Typical capacitances, C
-100
5
4
3
2
1
0
I
C = f(V
GS(TO)
3
2
1
5
0
0.01
D
VGS(TO) / V
0
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
j
); conditions: I
0.1
0
2%
Tj / C
2
50
1
j
GS
D
= 25 ˚C; V
typ
= 1 mA; V
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
Product specification
PHB50N06T
iss
10
, C
150
98%
BUK759-60
DS
DS
oss
4
= V
, C
= V
Rev 1.100
200
GS
rss
GS
100
.
5