PHB23NQ10LT NXP Semiconductors, PHB23NQ10LT Datasheet - Page 5

• Manufacturer Part Number: PHB23NQ10LT
• Description: Phb23nq10lt N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5.
T
PHB23NQ10LT_1
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
I
see
V
V
I
I
I
V
D
D
D
S
S
S
DS
GS
GS
GS
GS
DS
R
T
T
T
T
T
T
T
T
T
= 10 A; V
= 23 A; V
= 20 A; dI
= 250 A; V
= 1 mA; V
= 25 A; V
= 30 V
j
j
j
j
j
j
j
j
j
Figure 11
= 100 V; V
= 30 V; R
= 10 V; V
= 5 V; I
= 10 V; I
= 0 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
Rev. 01 — 11 July 2006
D
GS
GS
DS
S
DS
DS
D
/dt = 100 A/ s; V
= 10 A; see
L
GS
and
= 10 A; see
= 44 V; V
= 0 V; see
= 0 V
GS
DS
= V
= 1.2 ; V
= 25 V; f = 1 MHz
= 0 V
= 0 V
= 0 V
12
GS
; see
GS
Figure 13
Figure 6
GS
Figure 9
Figure 6
= 10 V;
= 5 V; R
GS
= 0 V;
and
N-channel TrenchMOS logic level FET
and
and
G
= 10
8
10
8
PHB23NQ10LT
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
100
89
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
60
-
55
49
3.7
9.3
1278
129
88
13
120
58
57
0.85
1.1
6.3
0.22
Max
-
-
2
-
2.3
10
500
100
75
203
72
-
-
-
1704
155
120
20
168
87
86
1.2
-
-
-
5 of 12
Unit
V
V
V
V
V
nA
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
ns
A
A
C