PHB160N03T NXP Semiconductors, PHB160N03T Datasheet - Page 6

• Manufacturer Part Number: PHB160N03T
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07325
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
R DSon
= 25 C
= 25 C
(m )
function of drain-source voltage; typical values.
of drain current; typical values.
(A)
I D
400
300
200
100
0
11
10
9
8
7
6
5
4
3
0
20
12
0
V GS =
5.5 V
6.5 V
10 V
6 V
7 V
8 V
2
20
10
9
4
40
V GS (V) =
6
60
8.5
4.5
I D (A)
V DS (V)
8
80
6.0
5.0
03ad22
8.0
7.5
7.0
6.5
03ad21
Rev. 01 — 13 September 2000
100
10
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain source on-state resistance
T
j
= 25 C and 175 C; V
I D
(A)
a
function of gate-source voltage; typical values.
factor as a function of junction temperature.
100
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.0
0
0
-60
0
a
V DS > I D X R DSon
1
-20
=
---------------------------- -
R
DSon 25 C
R
2
20
DSon
DS
T j = 175 o C
3
PHB160N03T
I
60
D
© Philips Electronics N.V. 2000. All rights reserved.
4
R
DSon
100
5
V GS (V)
T
j
140
25 o C
(
6
o
C)
03ad23
03aa27
180
7
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