RTF011P02 ROHM Co. Ltd., RTF011P02 Datasheet - Page 2

• Manufacturer Part Number: RTF011P02
• Description: 2.5v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25GC)
Body diode characteristics (Source-drain) (Ta=25GC)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
Q
GSS
DSS
t
t
oss
SD
rss
iss
fs
r
f
gs
gd
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−0.7
Min.
−20
0.7
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
280
310
570
160
2.0
0.6
0.5
35
20
12
11
22
−
−
−
−
−
7
−
Max.
Max.
−2.0
−1.2
±10
390
430
800
−1
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
DD
= −1mA, V
= −1A, V
= −1A, V
= −0.5A, V
= −0.5A
L
G
= −1A
L
= −0.4A, V
=30Ω
=15Ω R
=10Ω
= ±12V, V
= −20V, V
= −10V, I
= −10V, I
= −10V
=0V
= −4.5V
−15V
−15 V
Conditions
GS
GS
Conditions
G
GS
GS
GS
= −4.5V
= −4V
D
D
V
=10Ω
GS
DS
= −1mA
= −0.5A
=0V
GS
=0V
= −2.5V
=0V
=0V
= −4.5V
RTF011P02
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