RTF011P02 ROHM Co. Ltd., RTF011P02 Datasheet

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RTF011P02

Manufacturer Part Number
RTF011P02
Description
2.5v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet
Transistors
2.5V Drive Pch MOS FET
RTF011P02
Silicon P-channel MOS FET
1) Low On-resistance.
2) High speed switching.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
∗ Mounted on a ceramic board
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Source current
(Body diode)
Type
RTF011P02
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25GC)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TL
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
−0.4
156
−20
±12
150
0.8
±1
±4
−4
External dimensions (Unit : mm)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Inner circuit
TUMT3
°C/W
Unit
Unit
°C
°C
(1)
W
V
V
A
A
A
A
∗1
Abbreviated symbol : WW
0.65 0.65
(3)
(1)
2.0
0.3
1.3
(3)
(2)
(2)
∗2
0.85Max.
RTF011P02
0.17
0.77
(1) Gate
(2) Source
(3) Drain
0~0.1
1/2

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RTF011P02 Summary of contents

Page 1

... DSS V ±12 V GSS I ± ∗1 I ± −0 ∗ −4 SP ∗ Tch 150 °C Tstg −55 to +150 °C Symbol Limits Unit ∗ Rth(ch-a) 156 °C/W RTF011P02 0.85Max. 2.0 0.3 0.77 (3) 0~0.1 (1) (2) 0.17 0.65 0.65 1.3 Abbreviated symbol : WW (3) ∗2 ∗1 (2) (1) Gate (2) Source (3) Drain 1/2 ...

Page 2

... R =30Ω L − 7 − =10Ω − 2.0 − nC −15V −1A 0.6 nC − − =15Ω R − 0.5 − Min. Typ. Max. Unit Conditions −0.4A, V − − −1 RTF011P02 =0V DS =0V = −1mA = −2.5V = −0. −4.5V GS =10Ω =0V 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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